Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide
We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance...
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Main Authors: | , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2010
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/92081 http://hdl.handle.net/10220/6408 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si the change of the nc-Si capacitance as a result of the charge trapping. |
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