Concurrent nonvolatile resistance and capacitance switching in LaAlO3

• المؤلفون الرئيسيون: Wu, Shuxiang, Peng, Haiyang, Wu, Tom
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/92389; http://hdl.handle.net/10220/6923

We report on the correlated nonvolatile resistance and capacitance switching in Pt/LaAlO3/Nb:SrTiO3 heterostructures. The pristine devices show the typical characteristics of a Schottky junction; however, after forming, a reverse bias switches the device into a low resistance and high capacitance st...