Two finite-difference time-domain methods incorporated with memristor
Two finite-difference time-domain (FDTD) methods incorporated with memristor are presented. The update equations are derived based on Maxwell’s equations, and the physical model is given by Hewlett-Packard (HP) lab. The first method is derived by calculating the memristance directly while the secon...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/93735 http://hdl.handle.net/10220/38347 http://www.jpier.org/PIERM/pier.php?volume=42 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Two finite-difference time-domain (FDTD) methods incorporated with memristor are presented. The update equations are derived based on Maxwell’s equations, and the physical model is given by Hewlett-Packard (HP) lab. The first method is derived by calculating the memristance directly
while the second method is derived by the relationship between electric charge and flux. Numerical results are given to discuss the accuracy, efficiency and stability of both proposed methods. |
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