Two finite-difference time-domain methods incorporated with memristor

Two finite-difference time-domain (FDTD) methods incorporated with memristor are presented. The update equations are derived based on Maxwell’s equations, and the physical model is given by Hewlett-Packard (HP) lab. The first method is derived by calculating the memristance directly while the secon...

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Main Authors: Yang, Zaifeng, Tan, Eng Leong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Subjects:
Online Access:https://hdl.handle.net/10356/93735
http://hdl.handle.net/10220/38347
http://www.jpier.org/PIERM/pier.php?volume=42
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-937352019-12-06T18:44:33Z Two finite-difference time-domain methods incorporated with memristor Yang, Zaifeng Tan, Eng Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Two finite-difference time-domain (FDTD) methods incorporated with memristor are presented. The update equations are derived based on Maxwell’s equations, and the physical model is given by Hewlett-Packard (HP) lab. The first method is derived by calculating the memristance directly while the second method is derived by the relationship between electric charge and flux. Numerical results are given to discuss the accuracy, efficiency and stability of both proposed methods. Published version 2015-07-16T03:53:05Z 2019-12-06T18:44:33Z 2015-07-16T03:53:05Z 2019-12-06T18:44:33Z 2015 2015 Journal Article Yang, Z., & Tan, E. L. (2015). Two finite-difference time-domain methods incorporated with memristor. Progress In Electromagnetics Research M, 42, 153-158. 1070-4698 https://hdl.handle.net/10356/93735 http://hdl.handle.net/10220/38347 http://www.jpier.org/PIERM/pier.php?volume=42 en Progress in electromagnetics research M © 2015 EMW Publishing. This paper was published in Progress In Electromagnetics Research M and is made available as an electronic reprint (preprint) with permission of EMW Publishing. The published version is available at: [http://www.jpier.org/PIERM/pier.php?volume=42]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 6 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Yang, Zaifeng
Tan, Eng Leong
Two finite-difference time-domain methods incorporated with memristor
description Two finite-difference time-domain (FDTD) methods incorporated with memristor are presented. The update equations are derived based on Maxwell’s equations, and the physical model is given by Hewlett-Packard (HP) lab. The first method is derived by calculating the memristance directly while the second method is derived by the relationship between electric charge and flux. Numerical results are given to discuss the accuracy, efficiency and stability of both proposed methods.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Yang, Zaifeng
Tan, Eng Leong
format Article
author Yang, Zaifeng
Tan, Eng Leong
author_sort Yang, Zaifeng
title Two finite-difference time-domain methods incorporated with memristor
title_short Two finite-difference time-domain methods incorporated with memristor
title_full Two finite-difference time-domain methods incorporated with memristor
title_fullStr Two finite-difference time-domain methods incorporated with memristor
title_full_unstemmed Two finite-difference time-domain methods incorporated with memristor
title_sort two finite-difference time-domain methods incorporated with memristor
publishDate 2015
url https://hdl.handle.net/10356/93735
http://hdl.handle.net/10220/38347
http://www.jpier.org/PIERM/pier.php?volume=42
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