Two finite-difference time-domain methods incorporated with memristor
Two finite-difference time-domain (FDTD) methods incorporated with memristor are presented. The update equations are derived based on Maxwell’s equations, and the physical model is given by Hewlett-Packard (HP) lab. The first method is derived by calculating the memristance directly while the secon...
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sg-ntu-dr.10356-937352019-12-06T18:44:33Z Two finite-difference time-domain methods incorporated with memristor Yang, Zaifeng Tan, Eng Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Two finite-difference time-domain (FDTD) methods incorporated with memristor are presented. The update equations are derived based on Maxwell’s equations, and the physical model is given by Hewlett-Packard (HP) lab. The first method is derived by calculating the memristance directly while the second method is derived by the relationship between electric charge and flux. Numerical results are given to discuss the accuracy, efficiency and stability of both proposed methods. Published version 2015-07-16T03:53:05Z 2019-12-06T18:44:33Z 2015-07-16T03:53:05Z 2019-12-06T18:44:33Z 2015 2015 Journal Article Yang, Z., & Tan, E. L. (2015). Two finite-difference time-domain methods incorporated with memristor. Progress In Electromagnetics Research M, 42, 153-158. 1070-4698 https://hdl.handle.net/10356/93735 http://hdl.handle.net/10220/38347 http://www.jpier.org/PIERM/pier.php?volume=42 en Progress in electromagnetics research M © 2015 EMW Publishing. This paper was published in Progress In Electromagnetics Research M and is made available as an electronic reprint (preprint) with permission of EMW Publishing. The published version is available at: [http://www.jpier.org/PIERM/pier.php?volume=42]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 6 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Yang, Zaifeng Tan, Eng Leong Two finite-difference time-domain methods incorporated with memristor |
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Two finite-difference time-domain (FDTD) methods incorporated with memristor are presented. The update equations are derived based on Maxwell’s equations, and the physical model is given by Hewlett-Packard (HP) lab. The first method is derived by calculating the memristance directly
while the second method is derived by the relationship between electric charge and flux. Numerical results are given to discuss the accuracy, efficiency and stability of both proposed methods. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Yang, Zaifeng Tan, Eng Leong |
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Article |
author |
Yang, Zaifeng Tan, Eng Leong |
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Yang, Zaifeng |
title |
Two finite-difference time-domain methods incorporated with memristor |
title_short |
Two finite-difference time-domain methods incorporated with memristor |
title_full |
Two finite-difference time-domain methods incorporated with memristor |
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Two finite-difference time-domain methods incorporated with memristor |
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Two finite-difference time-domain methods incorporated with memristor |
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two finite-difference time-domain methods incorporated with memristor |
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2015 |
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https://hdl.handle.net/10356/93735 http://hdl.handle.net/10220/38347 http://www.jpier.org/PIERM/pier.php?volume=42 |
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