Ultraviolet emission from a ZnO rod homojunction light-emitting diode

Ultraviolet emission from a ZnO rod homojunction light-emitting diode

Ultraviolet electroluminescence was demonstrated at room temperature from a ZnO rod homojunction light-emitting diode array. The p-type doping was realized by phosphorous (P) ion implantation into defect-free ZnO rods followed by annealing. High resolution transmission electron microscopy shows the...

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Bibliographic Details
Main Authors: Li, X. C., Sun, Xiaowei, Ling, Bo, Zhao, Jun Liang, Tan, Swee Tiam, Yang, Yi, Shen, Yiqiang, Dong, Zhili
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2011
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:https://hdl.handle.net/10356/93779
http://hdl.handle.net/10220/6882
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Institution: Nanyang Technological University
Language: English
Description
Summary:Ultraviolet electroluminescence was demonstrated at room temperature from a ZnO rod homojunction light-emitting diode array. The p-type doping was realized by phosphorous (P) ion implantation into defect-free ZnO rods followed by annealing. High resolution transmission electron microscopy shows the lattice compression of annealed single crystalline P-doped ZnO rod compared to the as-grown ZnO rod, suggesting atomically incorporation of P into the ZnO wurtzite structure. p-type doping was confirmed by low temperature photoluminescence spectra and single rod current-voltage characterization.

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