Ultraviolet emission from a ZnO rod homojunction light-emitting diode

• Main Authors: Li, X. C., Sun, Xiaowei, Ling, Bo, Zhao, Jun Liang, Tan, Swee Tiam, Yang, Yi, Shen, Yiqiang, Dong, Zhili
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/93779; http://hdl.handle.net/10220/6882
• Institution: Nanyang Technological University

Ultraviolet electroluminescence was demonstrated at room temperature from a ZnO rod homojunction light-emitting diode array. The p-type doping was realized by phosphorous (P) ion implantation into defect-free ZnO rods followed by annealing. High resolution transmission electron microscopy shows the lattice compression of annealed single crystalline P-doped ZnO rod compared to the as-grown ZnO rod, suggesting atomically incorporation of P into the ZnO wurtzite structure. p-type doping was confirmed by low temperature photoluminescence spectra and single rod current-voltage characterization.