Influence of nanocrystal distribution on electroluminescence from Si+-implanted SiO2 thin films

• المؤلفون الرئيسيون: Ding, Liang, Chen, Tupei, Yang, Ming, Zhu, Fu Rong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/93791; http://hdl.handle.net/10220/6939

Light emitting diodes (LEDs) based on a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in SiO2 have been fabricated with low-energy ion implantation. Under a negative gate voltage as low as ~-5 V, both visible and infrared (IR) electroluminescence (EL) have...