Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

• المؤلفون الرئيسيون: Liu, Juqing, Yin, Zongyou, Cao, Xiehong, Zhao, Fei, Lin, Anping, Xie, Linghai, Fan, Qu-Li, Boey, Freddy Yin Chiang, Zhang, Hua, Huang, Wei
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94175; http://hdl.handle.net/10220/8572

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current−voltage (I−V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memo...