Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices

• Main Authors: Liu, Juqing, Yin, Zongyou, Cao, Xiehong, Zhao, Fei, Wang, Lianhui, Huang, Wei, Zhang, Hua
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/100875; http://hdl.handle.net/10220/18985
• Institution: Nanyang Technological University

A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all...