Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices

Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices

A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all...

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Main Authors: Liu, Juqing, Yin, Zongyou, Cao, Xiehong, Zhao, Fei, Wang, Lianhui, Huang, Wei, Zhang, Hua
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/100875
http://hdl.handle.net/10220/18985
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1008752020-06-01T10:13:33Z Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices Liu, Juqing Yin, Zongyou Cao, Xiehong Zhao, Fei Wang, Lianhui Huang, Wei Zhang, Hua School of Materials Science & Engineering DRNTU::Engineering::Materials A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices. 2014-03-27T05:07:05Z 2019-12-06T20:29:35Z 2014-03-27T05:07:05Z 2019-12-06T20:29:35Z 2013 2013 Journal Article Liu, J., Yin, Z., Cao, X., Zhao, F., Wang, L., Huang, W., et al. (2013). Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices. Advanced Materials, 25(2), 233-238. 0935-9648 https://hdl.handle.net/10356/100875 http://hdl.handle.net/10220/18985 10.1002/adma.201203349 en Advanced materials © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Liu, Juqing
Yin, Zongyou
Cao, Xiehong
Zhao, Fei
Wang, Lianhui
Huang, Wei
Zhang, Hua
Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
description A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Liu, Juqing
Yin, Zongyou
Cao, Xiehong
Zhao, Fei
Wang, Lianhui
Huang, Wei
Zhang, Hua
format Article
author Liu, Juqing
Yin, Zongyou
Cao, Xiehong
Zhao, Fei
Wang, Lianhui
Huang, Wei
Zhang, Hua
author_sort Liu, Juqing
title Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
title_short Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
title_full Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
title_fullStr Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
title_full_unstemmed Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
title_sort fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
publishDate 2014
url https://hdl.handle.net/10356/100875
http://hdl.handle.net/10220/18985
_version_ 1681056251534901248

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