Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices

Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices

A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all...

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Bibliographic Details
Main Authors: Liu, Juqing, Yin, Zongyou, Cao, Xiehong, Zhao, Fei, Wang, Lianhui, Huang, Wei, Zhang, Hua
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/100875
http://hdl.handle.net/10220/18985
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Institution: Nanyang Technological University
Language: English
Description
Summary:A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.

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