Controlled synthesis of copper-silicide nanostructures
Octahedral-shaped, spindle-shaped, and wire-shaped Cu3Si nanostructures were synthesized through a silicon void-filling process. Faceted silicon voids were observed to spontaneously grow at the SiO2/Si interface through the catalytic effect of Cu3Si, and their shapes were modified by the stresses at...
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sg-ntu-dr.10356-942682020-06-01T10:01:44Z Controlled synthesis of copper-silicide nanostructures Li, Shaozhou Cai, Hui Gan, Chee Lip Guo, Jun Dong, Zhili Ma, Jan School of Materials Science & Engineering DRNTU::Engineering::Materials::Nanostructured materials Octahedral-shaped, spindle-shaped, and wire-shaped Cu3Si nanostructures were synthesized through a silicon void-filling process. Faceted silicon voids were observed to spontaneously grow at the SiO2/Si interface through the catalytic effect of Cu3Si, and their shapes were modified by the stresses at the Si/Cu3Si interfaces. By controlling the relative amount of stress relief, it is possible to form differently shaped silicon voids. This work shows that different patterned nanostuctures of other materials may also be created through this growth mechanism. 2011-12-16T03:43:28Z 2019-12-06T18:53:32Z 2011-12-16T03:43:28Z 2019-12-06T18:53:32Z 2010 2010 Journal Article Li, S., Cai, H., Gan, C. L., Guo, J., Dong, Z., Ma, J. (2010). Controlled Synthesis of Copper-Silicide Nanostructures. Crystal Growth and Design, 10 (7), 2983–2989. https://hdl.handle.net/10356/94268 http://hdl.handle.net/10220/7413 10.1021/cg1000232 en Crystal growth and design © 2010 American Chemical Society |
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DRNTU::Engineering::Materials::Nanostructured materials Li, Shaozhou Cai, Hui Gan, Chee Lip Guo, Jun Dong, Zhili Ma, Jan Controlled synthesis of copper-silicide nanostructures |
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Octahedral-shaped, spindle-shaped, and wire-shaped Cu3Si nanostructures were synthesized through a silicon void-filling process. Faceted silicon voids were observed to spontaneously grow at the SiO2/Si interface through the catalytic effect of Cu3Si, and their shapes were modified by the stresses at the Si/Cu3Si interfaces. By controlling the relative amount of stress relief, it is possible to form differently shaped silicon voids. This work shows that different patterned nanostuctures of other materials may also be created through this growth mechanism. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Li, Shaozhou Cai, Hui Gan, Chee Lip Guo, Jun Dong, Zhili Ma, Jan |
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Article |
author |
Li, Shaozhou Cai, Hui Gan, Chee Lip Guo, Jun Dong, Zhili Ma, Jan |
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Li, Shaozhou |
title |
Controlled synthesis of copper-silicide nanostructures |
title_short |
Controlled synthesis of copper-silicide nanostructures |
title_full |
Controlled synthesis of copper-silicide nanostructures |
title_fullStr |
Controlled synthesis of copper-silicide nanostructures |
title_full_unstemmed |
Controlled synthesis of copper-silicide nanostructures |
title_sort |
controlled synthesis of copper-silicide nanostructures |
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2011 |
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https://hdl.handle.net/10356/94268 http://hdl.handle.net/10220/7413 |
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1681057564268167168 |