Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor

• Main Authors: Ong, K. K., Pey, Kin Leong, Lee, Pooi See, Wee, A. T. S., Wang, X. C., Tung, Chih Hang, Tang, L. J., Chong, Y. F.
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/94356; http://hdl.handle.net/10220/8062
• Institution: Nanyang Technological University

In this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow p+ln junction. Using an additional low thermal budget rapid thermal annealing at 600 °C for 60 s, suppression of junction leakage current of two orders in a single-pulse laser annealing and one order in a ten-pulse laser annealing is achieved through a reduction of the residual crystalline defects that could not be annihilated by laser annealing. p-channel metal-oxide-semiconductor field effect transistors with good electrical characteristics can be obtained using pulsed laser annealing followed by a low thermal budget rapid thermal annealing.