Electrochemical deposition of Cl-doped n-type Cu2O on reduced graphene oxide electrodes

• المؤلفون الرئيسيون: Wu, Shixin, Yin, Zongyou, He, Qiyuan, Lu, Gang, Zhou, Xiaozhu, Zhang, Hua
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94380; http://hdl.handle.net/10220/8390

Reduced graphene oxide (rGO) electrodes can be applied for the electrochemical deposition of various semiconductor oxides. In this study, we demonstrate the electrochemical deposition of Cl-doped n-type Cu2O (Cl–Cu2O) on rGO electrodes. The structure and properties of the deposited Cl–Cu2O have been investigated extensively. Moreover, the effect of Cl doping on the carrier concentration and photocurrent of Cl–Cu2O has also been investigated. Our study shows significant implications in tailoring the properties of materials deposited on rGO electrodes by using electrochemical methods.