On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

• Main Authors: Kyaw, Z., Ji, Y., Dikme, Y., Ju, Zhengang, Tan, Swee Tiam, Zhang, Zi-Hui, Sun, Xiaowei, Demir, Hilmi Volkan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/94655; http://hdl.handle.net/10220/8126
• Institution: Nanyang Technological University

A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth tempera...