On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth tempera...

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Main Authors:	Kyaw, Z., Ji, Y., Dikme, Y., Ju, Zhengang, Tan, Swee Tiam, Zhang, Zi-Hui, Sun, Xiaowei, Demir, Hilmi Volkan
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2012
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/94655 http://hdl.handle.net/10220/8126
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-946552020-03-07T13:57:27Z On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer Kyaw, Z. Ji, Y. Dikme, Y. Ju, Zhengang Tan, Swee Tiam Zhang, Zi-Hui Sun, Xiaowei Demir, Hilmi Volkan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells. Published version 2012-05-23T02:33:58Z 2019-12-06T18:59:43Z 2012-05-23T02:33:58Z 2019-12-06T18:59:43Z 2012 2012 Journal Article Ju, Z., Tan, S. T., Zhang, Z.-H., Ji, Y., Kyaw, Z., Dikme, Y., et al. (2012). On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer. Applied physics letters, 100. https://hdl.handle.net/10356/94655 http://hdl.handle.net/10220/8126 10.1063/1.3694054 165110 en Applied physics letters © 2012 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.3694054]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Kyaw, Z. Ji, Y. Dikme, Y. Ju, Zhengang Tan, Swee Tiam Zhang, Zi-Hui Sun, Xiaowei Demir, Hilmi Volkan On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
description	A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect were also carried out to verify the experimental data. The results suggest that the redshift of the peak emission wavelength is originated from the enhanced indium incorporation, which results from the reduced strain during the growth of quantum wells.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Kyaw, Z. Ji, Y. Dikme, Y. Ju, Zhengang Tan, Swee Tiam Zhang, Zi-Hui Sun, Xiaowei Demir, Hilmi Volkan
format	Article
author	Kyaw, Z. Ji, Y. Dikme, Y. Ju, Zhengang Tan, Swee Tiam Zhang, Zi-Hui Sun, Xiaowei Demir, Hilmi Volkan
author_sort	Kyaw, Z.
title	On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
title_short	On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
title_full	On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
title_fullStr	On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
title_full_unstemmed	On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
title_sort	on the origin of the redshift in the emission wavelength of ingan/gan blue light emitting diodes grown with a higher temperature interlayer
publishDate	2012
url	https://hdl.handle.net/10356/94655 http://hdl.handle.net/10220/8126
_version_	1681049923020128256

On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

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