DNA sensing by field-effect transistors based on networks of carbon nanotubes

DNA sensing by field-effect transistors based on networks of carbon nanotubes

We report on the sensing mechanism of electrical detection of deoxyribonucleic acid (DNA) hybridization for Au- and Cr-contacted field effect transistors based on single-walled carbon nanotube (SWCNT) networks. Barrier height extraction via low-temperature electrical measurement provides direct evid...

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Bibliographic Details
Main Authors: Rogers, John A., Dong, Xiaochen, Ho, Xinning, Lee, Pooi See, Kasim, Johnson, Shen, Zexiang, Mhaisalkar, Subodh Gautam, Gui, Ee Ling, Li, Lain-Jong, Zhang, Keke, Xu, Yangping
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/94712
http://hdl.handle.net/10220/8506
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Institution: Nanyang Technological University
Language: English
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Summary:We report on the sensing mechanism of electrical detection of deoxyribonucleic acid (DNA) hybridization for Au- and Cr-contacted field effect transistors based on single-walled carbon nanotube (SWCNT) networks. Barrier height extraction via low-temperature electrical measurement provides direct evidence for the notion that the energy level alignment between electrode and SWCNTs can be affected by DNA immobilization and hybridization. The study of location-selective capping using photoresist provides comprehensive evidence that the sensing of DNA is dominated by the change in metal−SWCNT junctions rather than the channel conductance.

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