Laser-induced Ni(Pt) germanosilicide formation through a self-limiting melting phenomenon on Si1-xGex/Si heterostructure

• Main Authors: Setiawan, Y., Lee, Pooi See, Pey, Kin Leong, Wang, X. C., Lim, G. C., Tan, B. L.
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/95001; http://hdl.handle.net/10220/8101
• Institution: Nanyang Technological University

Laser-induced Ni(Pt) germanosilicide formation on Si1−xGex /Si substrate has resulted in the formation of smooth Ni(Pt) germanosilicide/Si interface with minimum interface roughness which is preferred as a contact material. A confined (self-limiting) melting phenomenon occurred during the laser-induced silicidation process at laser fluence of 0.4 J cm−2 (just at the melting threshold of the sample). This phenomenon is caused by significant differences in material properties of Si1−xGex alloy and Si substrates. Formation of highly textured [Ni1−v(Pt)v](Si1−yGey) phase was detected in the sample after 20-pulsed laser thermal annealing at 0.4 J cm−2. The formation mechanism of the Ni(Pt) monogermanosilicide is discussed.