Thermal reaction of nickel and Si0.75Ge0.25 alloy

The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical vapor deposited Si0.75Ge0.25 alloy have been studied within the temperature range of 300–900 °C for forming low resistive and uniform silicide films for future application in SiGe based metal–oxide–se...

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Main Authors: Pey, Kin Leong, Chattopadhyay, Sujay, Lee, Pooi See, Choi, W. K., Zhao, H. B., Antoniadis, D. A., Fitzgerald, Eugene A.
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/95005
http://hdl.handle.net/10220/8633
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-950052023-07-14T15:46:48Z Thermal reaction of nickel and Si0.75Ge0.25 alloy Pey, Kin Leong Chattopadhyay, Sujay Lee, Pooi See Choi, W. K. Zhao, H. B. Antoniadis, D. A. Fitzgerald, Eugene A. School of Materials Science & Engineering DRNTU::Engineering::Materials The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical vapor deposited Si0.75Ge0.25 alloy have been studied within the temperature range of 300–900 °C for forming low resistive and uniform silicide films for future application in SiGe based metal–oxide–semiconductor field effect transistor devices. The silicided films were characterized by the x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. Smooth and uniform nickel monogermanosilicide NiSi0.75Ge0.25 films have been observed for samples annealed at around 400–500 °C. For annealing temperatures of 500 °C and above, Ge-rich Si1−zGez grains where z>0.25 were found among Ge deficient Niy(SiwGe1−w)1−y grains where w<0.25 and the Niy(Si1−wGew)1−y phase is thermally stable up to an annealing temperature of 800 °C. We found that the Ni/SiGe reaction is mainly diffusion controlled with Ge and Ni as the dominant diffusing species compared to Si during the annealing process. In addition, Ge has been found to promote agglomeration especially above 700 °C, leading to an abrupt increase in the sheet resistance. Published version 2012-09-25T04:10:29Z 2019-12-06T19:06:20Z 2012-09-25T04:10:29Z 2019-12-06T19:06:20Z 2002 2002 Journal Article Pey, K. L., Choi, W. K., Chattopadhyay, S., Zhao, H. B., Fitzgerald, E. A., Antoniadis, D. A., et al (2002). Thermal reaction of nickel and Si0.75Ge0.25 alloy. Journal of Vacuum Science & Technology A, 20(6), 1903. 0734-2101 https://hdl.handle.net/10356/95005 http://hdl.handle.net/10220/8633 10.1116/1.1507339 en Journal of vacuum science & technology A © 2002 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology A and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at DOI: [http://dx.doi.org/10.1116/1.1507339]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Pey, Kin Leong
Chattopadhyay, Sujay
Lee, Pooi See
Choi, W. K.
Zhao, H. B.
Antoniadis, D. A.
Fitzgerald, Eugene A.
Thermal reaction of nickel and Si0.75Ge0.25 alloy
description The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical vapor deposited Si0.75Ge0.25 alloy have been studied within the temperature range of 300–900 °C for forming low resistive and uniform silicide films for future application in SiGe based metal–oxide–semiconductor field effect transistor devices. The silicided films were characterized by the x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. Smooth and uniform nickel monogermanosilicide NiSi0.75Ge0.25 films have been observed for samples annealed at around 400–500 °C. For annealing temperatures of 500 °C and above, Ge-rich Si1−zGez grains where z>0.25 were found among Ge deficient Niy(SiwGe1−w)1−y grains where w<0.25 and the Niy(Si1−wGew)1−y phase is thermally stable up to an annealing temperature of 800 °C. We found that the Ni/SiGe reaction is mainly diffusion controlled with Ge and Ni as the dominant diffusing species compared to Si during the annealing process. In addition, Ge has been found to promote agglomeration especially above 700 °C, leading to an abrupt increase in the sheet resistance.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Pey, Kin Leong
Chattopadhyay, Sujay
Lee, Pooi See
Choi, W. K.
Zhao, H. B.
Antoniadis, D. A.
Fitzgerald, Eugene A.
format Article
author Pey, Kin Leong
Chattopadhyay, Sujay
Lee, Pooi See
Choi, W. K.
Zhao, H. B.
Antoniadis, D. A.
Fitzgerald, Eugene A.
author_sort Pey, Kin Leong
title Thermal reaction of nickel and Si0.75Ge0.25 alloy
title_short Thermal reaction of nickel and Si0.75Ge0.25 alloy
title_full Thermal reaction of nickel and Si0.75Ge0.25 alloy
title_fullStr Thermal reaction of nickel and Si0.75Ge0.25 alloy
title_full_unstemmed Thermal reaction of nickel and Si0.75Ge0.25 alloy
title_sort thermal reaction of nickel and si0.75ge0.25 alloy
publishDate 2012
url https://hdl.handle.net/10356/95005
http://hdl.handle.net/10220/8633
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