Thermal reaction of nickel and Si0.75Ge0.25 alloy

• المؤلفون الرئيسيون: Pey, Kin Leong, Chattopadhyay, Sujay, Lee, Pooi See, Choi, W. K., Zhao, H. B., Antoniadis, D. A., Fitzgerald, Eugene A.
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95005; http://hdl.handle.net/10220/8633

The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical vapor deposited Si0.75Ge0.25 alloy have been studied within the temperature range of 300–900 °C for forming low resistive and uniform silicide films for future application in SiGe based metal–oxide–se...