Textured Ni(Pt) germanosilicide formation on a condensed Si1-xGex/Si substrate

• Main Authors: Setiawan, Y., Balakumar, S., Tan, Eu Jin, Pey, Kin Leong, Lee, Pooi See
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/95013; http://hdl.handle.net/10220/8004
• Institution: Nanyang Technological University

A study of Ni and Ni(Pt) germanosilicidation on a condensed Si1−xGex/Si substrate was performed. The partial relaxation of the condensed SiGe layer resulted in an improvement in the morphological stability of the germanosilicide through the alleviation of compressive stress. Pt alloying to the Ni film resulted in highly textured Ni(Pt) germanosilicide grains, particularly in the (002) orientation, due to the reduction in the interfacial energy caused by the presence of Pt alloy. Pt atoms diffuse slowly and result in a variation in lattice parameters in the Ni(Pt)SiGe grain as a function of depth. Nevertheless, Pt alloying has increased the morphological stability of the NiPtSiGe film.