Ultrafast exciton dynamics and two-photon pumped lasing from ZnSe nanowires

The carrier recombination dynamics in ZnSe nanowires (NWs) remain poorly understood despite more than a decade of research since their inception in 2001. Herein, through a comprehensive pump fluence- and temperature-dependent two-photon excitation (TPE) study, a clear picture of the carrier relaxati...

Full description

Saved in:
Bibliographic Details
Main Authors: Xing, Guichuan, Luo, Jingshan, Li, Hongxing, Wu, Bo, Liu, Xinfeng, Huan, Alfred Cheng Hon, Fan, Hong Jin, Sum, Tze Chien
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/95157
http://hdl.handle.net/10220/9818
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-95157
record_format dspace
spelling sg-ntu-dr.10356-951572020-03-07T12:37:20Z Ultrafast exciton dynamics and two-photon pumped lasing from ZnSe nanowires Xing, Guichuan Luo, Jingshan Li, Hongxing Wu, Bo Liu, Xinfeng Huan, Alfred Cheng Hon Fan, Hong Jin Sum, Tze Chien School of Physical and Mathematical Sciences DRNTU::Engineering::Materials::Photonics and optoelectronics materials The carrier recombination dynamics in ZnSe nanowires (NWs) remain poorly understood despite more than a decade of research since their inception in 2001. Herein, through a comprehensive pump fluence- and temperature-dependent two-photon excitation (TPE) study, a clear picture of the carrier relaxation pathways, intrinsic lifetimes, exciton oscillator strengths, and exciton-phonon interactions is presented for this NW system. Contrary to a common perception that the higher pump intensities needed to achieve two-photon-excited photoluminescence correspond to a higher exciton density threshold (nth) for two-photon pumped lasing, it is found that a much lower nth is needed to achieve lasing with TPE compared to single-photon excitation (SPE) of the same ZnSe NWs. This measurement is further supported by the greatly enhanced lasing action photostability characteristics of the ZnSe NWs under TPE. These findings have significant implications on the design and the tailoring of the optoelectronic properties of nanowire lasers. 2013-04-16T08:14:48Z 2019-12-06T19:09:18Z 2013-04-16T08:14:48Z 2019-12-06T19:09:18Z 2013 2013 Journal Article Xing, G., Luo, J., Li, H., Wu, B., Liu, X., Huan, A. C. H., et al. (2013). Ultrafast Exciton Dynamics and Two-Photon Pumped Lasing from ZnSe Nanowires. Advanced Optical Materials, 1(4), 319-326. 2195-1071 https://hdl.handle.net/10356/95157 http://hdl.handle.net/10220/9818 10.1002/adom.201200045 169237 en Advanced optical materials © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Photonics and optoelectronics materials
spellingShingle DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Xing, Guichuan
Luo, Jingshan
Li, Hongxing
Wu, Bo
Liu, Xinfeng
Huan, Alfred Cheng Hon
Fan, Hong Jin
Sum, Tze Chien
Ultrafast exciton dynamics and two-photon pumped lasing from ZnSe nanowires
description The carrier recombination dynamics in ZnSe nanowires (NWs) remain poorly understood despite more than a decade of research since their inception in 2001. Herein, through a comprehensive pump fluence- and temperature-dependent two-photon excitation (TPE) study, a clear picture of the carrier relaxation pathways, intrinsic lifetimes, exciton oscillator strengths, and exciton-phonon interactions is presented for this NW system. Contrary to a common perception that the higher pump intensities needed to achieve two-photon-excited photoluminescence correspond to a higher exciton density threshold (nth) for two-photon pumped lasing, it is found that a much lower nth is needed to achieve lasing with TPE compared to single-photon excitation (SPE) of the same ZnSe NWs. This measurement is further supported by the greatly enhanced lasing action photostability characteristics of the ZnSe NWs under TPE. These findings have significant implications on the design and the tailoring of the optoelectronic properties of nanowire lasers.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Xing, Guichuan
Luo, Jingshan
Li, Hongxing
Wu, Bo
Liu, Xinfeng
Huan, Alfred Cheng Hon
Fan, Hong Jin
Sum, Tze Chien
format Article
author Xing, Guichuan
Luo, Jingshan
Li, Hongxing
Wu, Bo
Liu, Xinfeng
Huan, Alfred Cheng Hon
Fan, Hong Jin
Sum, Tze Chien
author_sort Xing, Guichuan
title Ultrafast exciton dynamics and two-photon pumped lasing from ZnSe nanowires
title_short Ultrafast exciton dynamics and two-photon pumped lasing from ZnSe nanowires
title_full Ultrafast exciton dynamics and two-photon pumped lasing from ZnSe nanowires
title_fullStr Ultrafast exciton dynamics and two-photon pumped lasing from ZnSe nanowires
title_full_unstemmed Ultrafast exciton dynamics and two-photon pumped lasing from ZnSe nanowires
title_sort ultrafast exciton dynamics and two-photon pumped lasing from znse nanowires
publishDate 2013
url https://hdl.handle.net/10356/95157
http://hdl.handle.net/10220/9818
_version_ 1681040462753824768