Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography

The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12−100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-c...

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Main Authors: Mirkin, Chad A., Zhang, Hua, Chung, Sung-Wook
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/95377
http://hdl.handle.net/10220/8574
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-953772020-06-01T10:13:34Z Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography Mirkin, Chad A. Zhang, Hua Chung, Sung-Wook School of Materials Science & Engineering DRNTU::Engineering::Materials The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12−100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-chemical etching to remove the exposed gold. 2012-09-19T07:50:13Z 2019-12-06T19:13:43Z 2012-09-19T07:50:13Z 2019-12-06T19:13:43Z 2003 2003 Journal Article Zhang, H., Chung, S. W., & Mirkin, C. A. (2003). Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography. Nano Letters, 3(1), 43-45. 1530-6984 https://hdl.handle.net/10356/95377 http://hdl.handle.net/10220/8574 10.1021/nl0258473 en Nano letters © 2003 American Chemical Society.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Mirkin, Chad A.
Zhang, Hua
Chung, Sung-Wook
Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography
description The fabrication of arrays of sub-50-nm gold dots and line structures with deliberately designed 12−100-nm gaps is reported. These structures were made by initially using dip-pen nanolithography to pattern the etch resist, 16-mercaptohexadecanoic acid, on Au/Ti/SiOx/Si substrates and then using wet-chemical etching to remove the exposed gold.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Mirkin, Chad A.
Zhang, Hua
Chung, Sung-Wook
format Article
author Mirkin, Chad A.
Zhang, Hua
Chung, Sung-Wook
author_sort Mirkin, Chad A.
title Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography
title_short Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography
title_full Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography
title_fullStr Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography
title_full_unstemmed Fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography
title_sort fabrication of sub-50-nm solid-state nanostructures on the basis of dip-pen nanolithography
publishDate 2012
url https://hdl.handle.net/10356/95377
http://hdl.handle.net/10220/8574
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