Resistive switching in a GaOx-NiOx p-n heterojunction

We report a unidirectional bipolar resistive switching in an n-type GaOx/p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching behavior coincides with the switching between Ohmic conduction (low resistance) and rectifying behavior (high resistance...

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Bibliographic Details
Main Authors: Sun, Xiaowei, Leck, Kheng Swee, Zheng, K., Zhao, J. L., Vinh, V. Q., Zhao, R., Yeo, Y. G., Law, L. T., Teo, K. L.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/95443
http://hdl.handle.net/10220/9137
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Institution: Nanyang Technological University
Language: English