Resistive switching in a GaOx-NiOx p-n heterojunction

• Main Authors: Sun, Xiaowei, Leck, Kheng Swee, Zheng, K., Zhao, J. L., Vinh, V. Q., Zhao, R., Yeo, Y. G., Law, L. T., Teo, K. L.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Science::Physics
• Online Access: https://hdl.handle.net/10356/95443; http://hdl.handle.net/10220/9137
• Institution: Nanyang Technological University

We report a unidirectional bipolar resistive switching in an n-type GaOx/p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching behavior coincides with the switching between Ohmic conduction (low resistance) and rectifying behavior (high resistance...