Domain-related origin of magnetic relaxation in compressively strained manganite thin films

• Main Authors: Miao, B. F., Lin, W., Hu, W., David, A., Ding, H. F., Wu, T., Bakaul, Saidur Rahman
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Materials::Magnetic materials
• Online Access: https://hdl.handle.net/10356/95574; http://hdl.handle.net/10220/9138
• Institution: Nanyang Technological University

Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La0.7Sr0.3MnO3 thin films. Upon the removal of external magnetic field, the slow time-dependent increase of in-plane magnetization is correlated with the break-up of magnetic domains and the emergence of additional domain walls, whereas a reduction of magnetization for the initial short period dominates the magnetic relaxation at lower temperatures in thinner films. These relaxation effects underline the importance of domain dynamics in the properties of magnetic thin films.