Domain-related origin of magnetic relaxation in compressively strained manganite thin films

Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La0.7Sr0.3MnO3 thin films. Upon the removal of external m...

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Bibliographic Details
Main Authors: Miao, B. F., Lin, W., Hu, W., David, A., Ding, H. F., Wu, T., Bakaul, Saidur Rahman
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/95574
http://hdl.handle.net/10220/9138
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Institution: Nanyang Technological University
Language: English
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