High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the “magnetic” aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-ma...

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Main Authors: Anil Kumar, P., Sarma, D. D., Ogale, Satishchandra B., Thakare, Vishal, Xing, Guozhong, Peng, Haiyang, Rana, Abhimanyu, Game, Onkar, Banpurkar, Arun, Kolekar, Yesappa, Ghosh, Kartik, Wu, Tom
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/95675
http://hdl.handle.net/10220/9136
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Institution: Nanyang Technological University
Language: English