High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

• Main Authors: Anil Kumar, P., Sarma, D. D., Ogale, Satishchandra B., Thakare, Vishal, Xing, Guozhong, Peng, Haiyang, Rana, Abhimanyu, Game, Onkar, Banpurkar, Arun, Kolekar, Yesappa, Ghosh, Kartik, Wu, Tom
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Science::Physics::Electricity and magnetism
• Online Access: https://hdl.handle.net/10356/95675; http://hdl.handle.net/10220/9136
• Institution: Nanyang Technological University

The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the “magnetic” aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (∼0–100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.