Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices...

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Bibliographic Details
Main Authors: Qi, K. C., Ling, Bo, Sun, Xiaowei, Zhao, Jun Liang, Tan, Swee Tiam, Dong, Zhili, Yang, Yi, Yu, Hongyu
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/95679
http://hdl.handle.net/10220/8275
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Institution: Nanyang Technological University
Language: English
Description
Summary:n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices showed good rectifying behavior with a high forward-to-reverse current ratio of around 120 at ±7V. Strong ultraviolet electro-luminescence centered at ~390 nm and a broad green-band emission were observed from the diode at room-temperature. The p-CuAlO2 layer was found to facilitate hole injection from p+-Si into n-ZnO while confining the electrons at ZnO/CuAlO2 interface, thus effectively enhancing the recombination emission efficiency in ZnO NRs.

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