Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

• Main Authors: Qi, K. C., Ling, Bo, Sun, Xiaowei, Zhao, Jun Liang, Tan, Swee Tiam, Dong, Zhili, Yang, Yi, Yu, Hongyu
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/95679; http://hdl.handle.net/10220/8275
• Institution: Nanyang Technological University

n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices showed good rectifying behavior with a high forward-to-reverse current ratio of around 120 at ±7V. Strong ultraviolet electro-luminescence centered at ~390 nm and a broad green-band emission were observed from the diode at room-temperature. The p-CuAlO2 layer was found to facilitate hole injection from p+-Si into n-ZnO while confining the electrons at ZnO/CuAlO2 interface, thus effectively enhancing the recombination emission efficiency in ZnO NRs.