Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode
n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2012
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/95679 http://hdl.handle.net/10220/8275 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 總結: | n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diodes have been fabricated on p+-Si substrates. The CuAlO2 thin film was deposited by dc-magnetron sputtering while the ZnO nanorods (NRs) were fabricated using the vapor-phase transport method. The current–voltage characteristics of the devices showed good rectifying behavior with a high forward-to-reverse current ratio of around 120 at ±7V. Strong ultraviolet electro-luminescence centered at ~390 nm and a broad green-band emission were observed from the diode at room-temperature. The p-CuAlO2 layer was found to facilitate hole injection from p+-Si into n-ZnO while confining the electrons at ZnO/CuAlO2 interface, thus effectively enhancing the recombination emission efficiency in ZnO NRs. |
|---|