Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films

Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films

We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn1−xCuxO1−ySy) alloy thin films with high hole concentration. The Zn0.91Cu0.09O0.92S0.08 alloy thin films with a hole concentration of 4.3 × 1019 cm−3 show the strongest magnetization of 1.5μB/Cu. First-principles calculation s...

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Bibliographic Details
Main Authors: Li, Y. F., Pan, H. L., Yao, B., Xu, Y., Li, J. C., Zhang, L. G., Zhao, H. F., Shen, D. Z., Wu, T., Deng, Rui
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/95832
http://hdl.handle.net/10220/11443
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Institution: Nanyang Technological University
Language: English
Description
Summary:We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn1−xCuxO1−ySy) alloy thin films with high hole concentration. The Zn0.91Cu0.09O0.92S0.08 alloy thin films with a hole concentration of 4.3 × 1019 cm−3 show the strongest magnetization of 1.5μB/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn1−xCuxO1−ySy system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn1−xCuxO1−ySy alloy with high hole concentration is promising to find applications in spintronic devices.

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