Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films

We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn1−xCuxO1−ySy) alloy thin films with high hole concentration. The Zn0.91Cu0.09O0.92S0.08 alloy thin films with a hole concentration of 4.3 × 1019 cm−3 show the strongest magnetization of 1.5μB/Cu. First-principles calculation s...

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Main Authors: Li, Y. F., Pan, H. L., Yao, B., Xu, Y., Li, J. C., Zhang, L. G., Zhao, H. F., Shen, D. Z., Wu, T., Deng, Rui
其他作者: School of Physical and Mathematical Sciences
格式: Article
語言:English
出版: 2013
在線閱讀:https://hdl.handle.net/10356/95832
http://hdl.handle.net/10220/11443
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機構: Nanyang Technological University
語言: English
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spelling sg-ntu-dr.10356-958322020-03-07T12:37:21Z Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films Li, Y. F. Pan, H. L. Yao, B. Xu, Y. Li, J. C. Zhang, L. G. Zhao, H. F. Shen, D. Z. Wu, T. Deng, Rui School of Physical and Mathematical Sciences We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn1−xCuxO1−ySy) alloy thin films with high hole concentration. The Zn0.91Cu0.09O0.92S0.08 alloy thin films with a hole concentration of 4.3 × 1019 cm−3 show the strongest magnetization of 1.5μB/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn1−xCuxO1−ySy system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn1−xCuxO1−ySy alloy with high hole concentration is promising to find applications in spintronic devices. 2013-07-15T07:23:47Z 2019-12-06T19:22:09Z 2013-07-15T07:23:47Z 2019-12-06T19:22:09Z 2012 2012 Journal Article Li, Y. F., Pan, H. L., Yao, B., Deng, R., Xu, Y., Li, J. C., et al. (2012). Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films. Journal of physics D : applied physics, 45(7). https://hdl.handle.net/10356/95832 http://hdl.handle.net/10220/11443 10.1088/0022-3727/45/7/075002 en Journal of physics D : applied physics © 2012 IOP Publishing Ltd.
institution Nanyang Technological University
building NTU Library
country Singapore
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language English
description We report room temperature ferromagnetism enhancement of Cu-doped ZnOS (Zn1−xCuxO1−ySy) alloy thin films with high hole concentration. The Zn0.91Cu0.09O0.92S0.08 alloy thin films with a hole concentration of 4.3 × 1019 cm−3 show the strongest magnetization of 1.5μB/Cu. First-principles calculation shows that high hole concentration stabilizes the ferromagnetic ordering in the Zn1−xCuxO1−ySy system, indicating a strong correlation between ferromagnetic stability and hole concentration. These results suggest that the Zn1−xCuxO1−ySy alloy with high hole concentration is promising to find applications in spintronic devices.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Li, Y. F.
Pan, H. L.
Yao, B.
Xu, Y.
Li, J. C.
Zhang, L. G.
Zhao, H. F.
Shen, D. Z.
Wu, T.
Deng, Rui
format Article
author Li, Y. F.
Pan, H. L.
Yao, B.
Xu, Y.
Li, J. C.
Zhang, L. G.
Zhao, H. F.
Shen, D. Z.
Wu, T.
Deng, Rui
spellingShingle Li, Y. F.
Pan, H. L.
Yao, B.
Xu, Y.
Li, J. C.
Zhang, L. G.
Zhao, H. F.
Shen, D. Z.
Wu, T.
Deng, Rui
Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films
author_sort Li, Y. F.
title Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films
title_short Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films
title_full Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films
title_fullStr Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films
title_full_unstemmed Hole-mediated ferromagnetic enhancement and stability in Cu-doped ZnOS alloy thin films
title_sort hole-mediated ferromagnetic enhancement and stability in cu-doped znos alloy thin films
publishDate 2013
url https://hdl.handle.net/10356/95832
http://hdl.handle.net/10220/11443
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