Band gap opening of graphene by doping small boron nitride domains

• Main Authors: Fan, Xiaofeng, Shen, Zexiang, Kuo, Jer-Lai, Liu, A. Q.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 在線閱讀: https://hdl.handle.net/10356/95843; http://hdl.handle.net/10220/10742
• 機構: Nanyang Technological University

Boron nitride (BN) domains are easily formed in the basal plane of graphene due to phase separation. With first-principles calculations, it is demonstrated theoretically that the band gap of graphene can be opened effectively around K (or K′) points by introducing small BN domains. It is also found...