Covalent assembly of gold nanoparticles : an application toward transistor memory
This work reports a versatile approach utilizing covalent assembly of functionalized gold nanoparticles for organic field-effect transistor (OFET) based memory devices. 11-Mercapto-1-undecanol functionalized gold nanoparticles (AuNPs) having size of 5 ± 0.5 nm were synthesized and immobilized onto S...
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sg-ntu-dr.10356-961702021-01-07T03:40:07Z Covalent assembly of gold nanoparticles : an application toward transistor memory Gupta, Raju Kumar Ying, Gao Lee, Pooi See Srinivasan, M. P. School of Materials Science & Engineering Energy Research Institute @ NTU (ERI@N) DRNTU::Science::Chemistry::Physical chemistry This work reports a versatile approach utilizing covalent assembly of functionalized gold nanoparticles for organic field-effect transistor (OFET) based memory devices. 11-Mercapto-1-undecanol functionalized gold nanoparticles (AuNPs) having size of 5 ± 0.5 nm were synthesized and immobilized onto SiO2 substrate through covalent binding using a functionalized polymer as a surface modifier. The pentacene OFET-based memory devices utilizing such covalently bound gold nanoparticles with nanoparticle density of 5 × 1011 cm–2 exhibited a large memory window (7.7 V), high on/off ratio between memory states (105), and long retention time (>10 000 s). The present synthetic route for memory devices incorporating covalently immobilized gold nanoparticles has several advantages such as solution processable, enhanced device stability, low-cost, and low-temperature process and will be a step toward realization for low-cost, lightweight, flexible, logic display driver, and flash memory applications. 2013-10-31T05:21:04Z 2019-12-06T19:26:33Z 2013-10-31T05:21:04Z 2019-12-06T19:26:33Z 2012 2012 Journal Article Gupta, R. K., Ying, G., Srinivasan, M. P., & Lee, P. S. (2012). Covalent assembly of gold nanoparticles: an application toward transistor memory. The journal of physical chemistry B, 116(32), 9784-9790. https://hdl.handle.net/10356/96170 http://hdl.handle.net/10220/17120 10.1021/jp3008283 en The journal of physical chemistry B |
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DRNTU::Science::Chemistry::Physical chemistry Gupta, Raju Kumar Ying, Gao Lee, Pooi See Srinivasan, M. P. Covalent assembly of gold nanoparticles : an application toward transistor memory |
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This work reports a versatile approach utilizing covalent assembly of functionalized gold nanoparticles for organic field-effect transistor (OFET) based memory devices. 11-Mercapto-1-undecanol functionalized gold nanoparticles (AuNPs) having size of 5 ± 0.5 nm were synthesized and immobilized onto SiO2 substrate through covalent binding using a functionalized polymer as a surface modifier. The pentacene OFET-based memory devices utilizing such covalently bound gold nanoparticles with nanoparticle density of 5 × 1011 cm–2 exhibited a large memory window (7.7 V), high on/off ratio between memory states (105), and long retention time (>10 000 s). The present synthetic route for memory devices incorporating covalently immobilized gold nanoparticles has several advantages such as solution processable, enhanced device stability, low-cost, and low-temperature process and will be a step toward realization for low-cost, lightweight, flexible, logic display driver, and flash memory applications. |
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School of Materials Science & Engineering |
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School of Materials Science & Engineering Gupta, Raju Kumar Ying, Gao Lee, Pooi See Srinivasan, M. P. |
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Article |
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Gupta, Raju Kumar Ying, Gao Lee, Pooi See Srinivasan, M. P. |
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Gupta, Raju Kumar |
title |
Covalent assembly of gold nanoparticles : an application toward transistor memory |
title_short |
Covalent assembly of gold nanoparticles : an application toward transistor memory |
title_full |
Covalent assembly of gold nanoparticles : an application toward transistor memory |
title_fullStr |
Covalent assembly of gold nanoparticles : an application toward transistor memory |
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Covalent assembly of gold nanoparticles : an application toward transistor memory |
title_sort |
covalent assembly of gold nanoparticles : an application toward transistor memory |
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2013 |
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https://hdl.handle.net/10356/96170 http://hdl.handle.net/10220/17120 |
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