AlN nanowires : synthesis, physical properties, and nanoelectronics applications

One-dimensional aluminum nitride (AlN) nanostructures, especially AlN nanowires, have been subjected to numerous investigations due to their unique physical properties and applications ranging from electronics to biomedical. This article reviews the synthesis of AlN nanowires and studies their physi...

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Bibliographic Details
Main Authors: Kenry, Yong, Ken-Tye, Yu, Siu Fung
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/96234
http://hdl.handle.net/10220/11369
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Institution: Nanyang Technological University
Language: English
Description
Summary:One-dimensional aluminum nitride (AlN) nanostructures, especially AlN nanowires, have been subjected to numerous investigations due to their unique physical properties and applications ranging from electronics to biomedical. This article reviews the synthesis of AlN nanowires and studies their physical properties and potential nanoelectronics applications. First, the different fabrication techniques used to synthesize AlN nanowires and their growth mechanisms are discussed. Next, the physical properties of AlN nanowires, such as the field emission, transport, photoluminescence, as well as the mechanical and piezoelectric properties are summarized. Finally, the potential applications of AlN nanowires in the field of nanoelectronics are described. Furthermore, this review summarizes the perspectives and outlooks on the future development of AlN nanowires.