Unified regional approach to high temperature SOI DC/AC modeling

• Main Authors: Chiah, Siau Ben, Zhou, Xing, Chen, Zuhui, Chen, Hung Ming
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/96275; http://hdl.handle.net/10220/10624; http://www.techconnectworld.com/Nanotech2012/a.html?i=949
• Institution: Nanyang Technological University

This paper extends the recent model development [1] to include temperature effect in a range from room temperature to 300C. The extraction of the temperature coefficients used in the model and the prediction of the model accuracy to the measurement data are included in this paper. It has been indentified by Shucair [3], Prijic et al. [4] and further commented by Eman et al. [2] that a Zero-Temperature-Coefficient (ZTC) point of a MOSFET in the linear operating region is a value of Vg that the reduction of threshold voltage due to the higher operating temperature is counter-balanced by the reduction of the mobility. The reduction of threshold voltage at increasing temperature with missing mobility reduction effect is indicated. Together with our temperature-dependent mobility formulation with two temperature coefficients, which are extracted from three linear region IdsVgs measurement data at nominal, mid and high temperatures, a ZTC point in a range of temperature can be shown. The model prediction to the DC measurement and AC MEDICI data are shown.