Unified AC charge and DC current modeling for very-deep-submicron CMOS technology

A novel approach to formulating unified charge and drain current models for MOSFETs is presented. The charge modeling methodology is based on three regional surface-potential solutions, which describes three operating regions in MOSFETs. The modeling approach is extended to all regions with an expl...

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Bibliographic Details
Main Author: Chiah, Siau Ben
Other Authors: Zhou Xing
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:https://hdl.handle.net/10356/3534
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Institution: Nanyang Technological University