Unified AC charge and DC current modeling for very-deep-submicron CMOS technology
A novel approach to formulating unified charge and drain current models for MOSFETs is presented. The charge modeling methodology is based on three regional surface-potential solutions, which describes three operating regions in MOSFETs. The modeling approach is extended to all regions with an expl...
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Format: | Theses and Dissertations |
Published: |
2008
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Online Access: | https://hdl.handle.net/10356/3534 |
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Institution: | Nanyang Technological University |