Unified AC charge and DC current modeling for very-deep-submicron CMOS technology
A novel approach to formulating unified charge and drain current models for MOSFETs is presented. The charge modeling methodology is based on three regional surface-potential solutions, which describes three operating regions in MOSFETs. The modeling approach is extended to all regions with an expl...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Published: |
2008
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/3534 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Summary: | A novel approach to formulating unified charge and drain current models for MOSFETs is presented. The charge modeling methodology is based on three regional surface-potential solutions, which describes three operating regions in MOSFETs. The modeling approach is extended to all regions with an explicit single-piece unified compact charge model. This is also to ensure charge-neutrality across different regions of operation especially at the flat-band condition. The charge modeling approach requires no modification in formulation to include coupled polycrystalline silicon and quantum-mechanical effects for all regions. The approach has been shown to have the potential to be extended to non-conventional bulk-Si MOSFETs structure such as in strain-Si or hetero-structure MOSFETs. |
|---|