Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin

• Main Authors: Khaderbad, Mrunal A., Tjoa, Verawati, Rao, Manohar, Phandripande, Rohit, Madhu, Sheri, Wei, Jun, Ravikanth, Mangalampalli, Mathews, Nripan, Mhaisalkar, Subodh Gautam, Rao, V. Ramgopal
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/96364; http://hdl.handle.net/10220/10279
• Institution: Nanyang Technological University

We report a unipolar operation in reduced graphene oxide (RGO) field-effect transistors (FETs) via modification of the source/drain (S/D) electrode interfaces with self-assembled monolayers (SAMs) of 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)TTPOH) molecules. The dipolar Z...