Fabrication of unipolar graphene field-effect transistors by modifying source and drain electrode interfaces with zinc porphyrin
We report a unipolar operation in reduced graphene oxide (RGO) field-effect transistors (FETs) via modification of the source/drain (S/D) electrode interfaces with self-assembled monolayers (SAMs) of 5-(4-hydroxyphenyl)-10,15,20-tri-(p-tolyl) zinc(II) porphyrin (Zn(II)TTPOH) molecules. The dipolar Z...
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| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/96364 http://hdl.handle.net/10220/10279 |
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| Institution: | Nanyang Technological University |
| Language: | English |