Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2

Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2

We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photolumin...

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Bibliographic Details
Main Authors: Zahn, Dietrich R. T., Tonndorf, Philipp, Schmidt, Robert, Böttger, Philipp, Zhang, Xiao, Börner, Janna, Liebig, Andreas, Albrecht, Manfred, Gordan, Ovidiu, Steffen Michaelis de Vasconcellos, Bratschitsch, Rudolf, Kloc, Christian
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Materials
Online Access:https://hdl.handle.net/10356/96398
http://hdl.handle.net/10220/9924
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Institution: Nanyang Technological University
Language: English
Description
Summary:We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.

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