Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2
We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photolumin...
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sg-ntu-dr.10356-963982023-07-14T15:45:33Z Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2 Zahn, Dietrich R. T. Tonndorf, Philipp Schmidt, Robert Böttger, Philipp Zhang, Xiao Börner, Janna Liebig, Andreas Albrecht, Manfred Gordan, Ovidiu Steffen Michaelis de Vasconcellos Bratschitsch, Rudolf Kloc, Christian School of Materials Science & Engineering DRNTU::Engineering::Materials We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form. Published version 2013-05-13T04:32:02Z 2019-12-06T19:29:59Z 2013-05-13T04:32:02Z 2019-12-06T19:29:59Z 2013 2013 Journal Article Tonndorf, P., Schmidt, R., Böttger, P., Zhang, X., Börner, J., Liebig, A., et al. (2013). Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2. Optics express, 21(4), 4908-4916. 1094-4087 https://hdl.handle.net/10356/96398 http://hdl.handle.net/10220/9924 10.1364/OE.21.004908 en Optics express © 2013 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: http://dx.doi.org/10.1364/OE.21.004908. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| institution |
Nanyang Technological University |
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NTU Library |
| continent |
Asia |
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Singapore Singapore |
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NTU Library |
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| language |
English |
| topic |
DRNTU::Engineering::Materials |
| spellingShingle |
DRNTU::Engineering::Materials Zahn, Dietrich R. T. Tonndorf, Philipp Schmidt, Robert Böttger, Philipp Zhang, Xiao Börner, Janna Liebig, Andreas Albrecht, Manfred Gordan, Ovidiu Steffen Michaelis de Vasconcellos Bratschitsch, Rudolf Kloc, Christian Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2 |
| description |
We mechanically exfoliate mono- and few-layers of the
transition metal dichalcogenides molybdenum disulfide, molybdenum
diselenide, and tungsten diselenide. The exact number of layers is
unambiguously determined by atomic force microscopy and high-resolution
Raman spectroscopy. Strong photoluminescence emission is caused by the
transition from an indirect band gap semiconductor of bulk material to a
direct band gap semiconductor in atomically thin form. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Zahn, Dietrich R. T. Tonndorf, Philipp Schmidt, Robert Böttger, Philipp Zhang, Xiao Börner, Janna Liebig, Andreas Albrecht, Manfred Gordan, Ovidiu Steffen Michaelis de Vasconcellos Bratschitsch, Rudolf Kloc, Christian |
| format |
Article |
| author |
Zahn, Dietrich R. T. Tonndorf, Philipp Schmidt, Robert Böttger, Philipp Zhang, Xiao Börner, Janna Liebig, Andreas Albrecht, Manfred Gordan, Ovidiu Steffen Michaelis de Vasconcellos Bratschitsch, Rudolf Kloc, Christian |
| author_sort |
Zahn, Dietrich R. T. |
| title |
Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2 |
| title_short |
Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2 |
| title_full |
Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2 |
| title_fullStr |
Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2 |
| title_full_unstemmed |
Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2 |
| title_sort |
photoluminescence emission and raman response of monolayer mos2, mose2, and wse2 |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/96398 http://hdl.handle.net/10220/9924 |
| _version_ |
1772826430036508672 |