Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2

We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photolumin...

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Main Authors:	Zahn, Dietrich R. T., Tonndorf, Philipp, Schmidt, Robert, Böttger, Philipp, Zhang, Xiao, Börner, Janna, Liebig, Andreas, Albrecht, Manfred, Gordan, Ovidiu, Steffen Michaelis de Vasconcellos, Bratschitsch, Rudolf, Kloc, Christian
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	DRNTU::Engineering::Materials
Online Access:	https://hdl.handle.net/10356/96398 http://hdl.handle.net/10220/9924
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-963982023-07-14T15:45:33Z Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2 Zahn, Dietrich R. T. Tonndorf, Philipp Schmidt, Robert Böttger, Philipp Zhang, Xiao Börner, Janna Liebig, Andreas Albrecht, Manfred Gordan, Ovidiu Steffen Michaelis de Vasconcellos Bratschitsch, Rudolf Kloc, Christian School of Materials Science & Engineering DRNTU::Engineering::Materials We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form. Published version 2013-05-13T04:32:02Z 2019-12-06T19:29:59Z 2013-05-13T04:32:02Z 2019-12-06T19:29:59Z 2013 2013 Journal Article Tonndorf, P., Schmidt, R., Böttger, P., Zhang, X., Börner, J., Liebig, A., et al. (2013). Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2. Optics express, 21(4), 4908-4916. 1094-4087 https://hdl.handle.net/10356/96398 http://hdl.handle.net/10220/9924 10.1364/OE.21.004908 en Optics express © 2013 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: http://dx.doi.org/10.1364/OE.21.004908. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials
spellingShingle	DRNTU::Engineering::Materials Zahn, Dietrich R. T. Tonndorf, Philipp Schmidt, Robert Böttger, Philipp Zhang, Xiao Börner, Janna Liebig, Andreas Albrecht, Manfred Gordan, Ovidiu Steffen Michaelis de Vasconcellos Bratschitsch, Rudolf Kloc, Christian Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2
description	We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Zahn, Dietrich R. T. Tonndorf, Philipp Schmidt, Robert Böttger, Philipp Zhang, Xiao Börner, Janna Liebig, Andreas Albrecht, Manfred Gordan, Ovidiu Steffen Michaelis de Vasconcellos Bratschitsch, Rudolf Kloc, Christian
format	Article
author	Zahn, Dietrich R. T. Tonndorf, Philipp Schmidt, Robert Böttger, Philipp Zhang, Xiao Börner, Janna Liebig, Andreas Albrecht, Manfred Gordan, Ovidiu Steffen Michaelis de Vasconcellos Bratschitsch, Rudolf Kloc, Christian
author_sort	Zahn, Dietrich R. T.
title	Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2
title_short	Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2
title_full	Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2
title_fullStr	Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2
title_full_unstemmed	Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2
title_sort	photoluminescence emission and raman response of monolayer mos2, mose2, and wse2
publishDate	2013
url	https://hdl.handle.net/10356/96398 http://hdl.handle.net/10220/9924
_version_	1772826430036508672

Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2

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