Single-layer MoS2 phototransistors

• Main Authors: Yin, Zongyou, Li, Hai, Li, Hong, Jiang, Lin, Shi, Yumeng, Sun, Yinghui, Lu, Gang, Zhang, Qing, Chen, Xiaodong, Zhang, Hua
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/96679; http://hdl.handle.net/10220/10364
• Institution: Nanyang Technological University

A new phototransistor based on the mechanically exfoliated single-layer MoS2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.