Ultra-thin and flat mica as gate dielectric layers

Ultra-thin and flat mica as gate dielectric layers

Ultra-thin and flat mica-based carbon nanotube field-effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra-thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobili...

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Main Authors: Low, Chong Guan, Zhang, Qing
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/96798
http://hdl.handle.net/10220/10086
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-967982020-03-07T13:57:28Z Ultra-thin and flat mica as gate dielectric layers Low, Chong Guan Zhang, Qing School of Electrical and Electronic Engineering Centre of Micro-/Nano-electronics (NOVITAS) DRNTU::Engineering::Electrical and electronic engineering Ultra-thin and flat mica-based carbon nanotube field-effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra-thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobility improvement are achieved. The ultra-thin mica retains its surface flatness, indicating the potential application for low-dimensional materials in which surface roughness scattering is significant. 2013-06-10T02:31:31Z 2019-12-06T19:35:13Z 2013-06-10T02:31:31Z 2019-12-06T19:35:13Z 2012 2012 Journal Article Low, C. G., & Zhang, Q. (2012). Ultra-thin and Flat Mica as Gate Dielectric Layers. Small, 8(14), 2178-2183. 1613-6810 https://hdl.handle.net/10356/96798 http://hdl.handle.net/10220/10086 10.1002/smll.201200300 en Small © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Low, Chong Guan
Zhang, Qing
Ultra-thin and flat mica as gate dielectric layers
description Ultra-thin and flat mica-based carbon nanotube field-effect transistors reveal the excellent gate control capability and low leakage current due to the high dielectric constant and high dielectric strength of ultra-thin mica as the gate dielectric. Subthreshold swing of 110 mV/dec and carrier mobility improvement are achieved. The ultra-thin mica retains its surface flatness, indicating the potential application for low-dimensional materials in which surface roughness scattering is significant.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Low, Chong Guan
Zhang, Qing
format Article
author Low, Chong Guan
Zhang, Qing
author_sort Low, Chong Guan
title Ultra-thin and flat mica as gate dielectric layers
title_short Ultra-thin and flat mica as gate dielectric layers
title_full Ultra-thin and flat mica as gate dielectric layers
title_fullStr Ultra-thin and flat mica as gate dielectric layers
title_full_unstemmed Ultra-thin and flat mica as gate dielectric layers
title_sort ultra-thin and flat mica as gate dielectric layers
publishDate 2013
url https://hdl.handle.net/10356/96798
http://hdl.handle.net/10220/10086
_version_ 1681042322292211712

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