Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate
We report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characterist...
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sg-ntu-dr.10356-968632020-09-26T22:18:02Z Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan Wang, Hong Ang, Kian Siong Tan, Joyce Pei Ying Lin, Vivian Kaixin Todd, Shane Lo, Guo-Qiang Tripathy, Sudhiranjan School of Electrical and Electronic Engineering Temasek Laboratories DRNTU::Engineering::Electrical and electronic engineering We report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characteristics with a maximum drain current density of 853 mA/mm and a maximum extrinsic transconductance of 180 mS/mm. The device exhibited unit current-gain cut-off frequency of 28 GHz, maximum oscillation frequency of 64 GHz and OFF-state breakdown voltage of 60 V. This work demonstrates the feasibility of achieving good performance AlGaN/GaN HEMTs on 8-in. diameter Si(111) for low-cost high-frequency and high-power switching applications. Accepted version 2013-07-16T08:38:09Z 2019-12-06T19:35:50Z 2013-07-16T08:38:09Z 2019-12-06T19:35:50Z 2012 2012 Journal Article Arulkumaran, S., Ng, G. I., Vicknesh, S., Wang, H., Ang, K. S., Tan, J. P. Y., et al. (2012). Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate. Japanese Journal of Applied Physics, 51. 0021-4922 https://hdl.handle.net/10356/96863 http://hdl.handle.net/10220/11617 10.1143/JJAP.51.111001 en Japanese journal of applied physics © 2012 The Japan Society of Applied Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Japanese journal of applied physics, The Japan Society of Applied Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1143/JJAP.51.111001]. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan Wang, Hong Ang, Kian Siong Tan, Joyce Pei Ying Lin, Vivian Kaixin Todd, Shane Lo, Guo-Qiang Tripathy, Sudhiranjan Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate |
| description |
We report for the first time the DC and microwave characteristics of sub-micron gate (∼0.3 µm) AlGaN/GaN high-electron-mobility transistors (HEMTs) on 8-in. diameter Si(111) substrate. The fabricated sub-micron gate devices on crack-free AlGaN/GaN HEMT structures exhibited good pin.-off characteristics with a maximum drain current density of 853 mA/mm and a maximum extrinsic transconductance of 180 mS/mm. The device exhibited unit current-gain cut-off frequency of 28 GHz, maximum oscillation frequency of 64 GHz and OFF-state breakdown voltage of 60 V. This work demonstrates the feasibility of achieving good performance AlGaN/GaN HEMTs on 8-in. diameter Si(111) for low-cost high-frequency and high-power switching applications. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan Wang, Hong Ang, Kian Siong Tan, Joyce Pei Ying Lin, Vivian Kaixin Todd, Shane Lo, Guo-Qiang Tripathy, Sudhiranjan |
| format |
Article |
| author |
Arulkumaran, Subramaniam Ng, Geok Ing Vicknesh, Sahmuganathan Wang, Hong Ang, Kian Siong Tan, Joyce Pei Ying Lin, Vivian Kaixin Todd, Shane Lo, Guo-Qiang Tripathy, Sudhiranjan |
| author_sort |
Arulkumaran, Subramaniam |
| title |
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate |
| title_short |
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate |
| title_full |
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate |
| title_fullStr |
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate |
| title_full_unstemmed |
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate |
| title_sort |
direct current and microwave characteristics of sub-micron algan/gan high-electron-mobility transistors on 8-inch si(111) substrate |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/96863 http://hdl.handle.net/10220/11617 |
| _version_ |
1681057687027056640 |