From bulk to monolayer MoS2 : evolution of Raman scattering

Molybdenum disulfide (MoS2) is systematically studied using Raman spectroscopy with ultraviolet and visible laser lines. It is shown that only the Raman frequencies of and peaks vary monotonously with the layer number of ultrathin MoS2 flakes, while intensities or widths of the peaks vary arbitraril...

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Main Authors: Baillargeat, Dominique, Li, Hong, Zhang, Qing, Yap, Ray Chin Chong, Tay, Beng Kang, Teo, Edwin Hang Tong, Olivier, Aurelien
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/97030
http://hdl.handle.net/10220/10431
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-970302020-03-07T14:02:45Z From bulk to monolayer MoS2 : evolution of Raman scattering Baillargeat, Dominique Li, Hong Zhang, Qing Yap, Ray Chin Chong Tay, Beng Kang Teo, Edwin Hang Tong Olivier, Aurelien School of Electrical and Electronic Engineering Research Techno Plaza DRNTU::Engineering::Electrical and electronic engineering Molybdenum disulfide (MoS2) is systematically studied using Raman spectroscopy with ultraviolet and visible laser lines. It is shown that only the Raman frequencies of and peaks vary monotonously with the layer number of ultrathin MoS2 flakes, while intensities or widths of the peaks vary arbitrarily. The coupling between electronic transitions and phonons are found to become weaker when the layer number of MoS2 decreases, attributed to the increased electronic transition energies or elongated intralayer atomic bonds in ultrathin MoS2. The asymmetric Raman peak at 454 cm−1, which has been regarded as the overtone of longitudinal optical M phonons in bulk MoS2, is actually a combinational band involving a longitudinal acoustic mode (LA(M)) and an optical mode (). Our findings suggest a clear evolution of the coupling between electronic transition and phonon when MoS2 is scaled down from three- to two-dimensional geometry. 2013-06-17T04:16:17Z 2019-12-06T19:38:04Z 2013-06-17T04:16:17Z 2019-12-06T19:38:04Z 2012 2012 Journal Article Li, H., Zhang, Q., Yap, R. C. C., Tay, B. K., Teo, E. H. T., Olivier, A., et al. (2012). From Bulk to Monolayer MoS2: Evolution of Raman Scattering. Advanced Functional Materials, 22(7), 1385-1390. 1616-3028 https://hdl.handle.net/10356/97030 http://hdl.handle.net/10220/10431 10.1002/adfm.201102111 en Advanced functional materials © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Baillargeat, Dominique
Li, Hong
Zhang, Qing
Yap, Ray Chin Chong
Tay, Beng Kang
Teo, Edwin Hang Tong
Olivier, Aurelien
From bulk to monolayer MoS2 : evolution of Raman scattering
description Molybdenum disulfide (MoS2) is systematically studied using Raman spectroscopy with ultraviolet and visible laser lines. It is shown that only the Raman frequencies of and peaks vary monotonously with the layer number of ultrathin MoS2 flakes, while intensities or widths of the peaks vary arbitrarily. The coupling between electronic transitions and phonons are found to become weaker when the layer number of MoS2 decreases, attributed to the increased electronic transition energies or elongated intralayer atomic bonds in ultrathin MoS2. The asymmetric Raman peak at 454 cm−1, which has been regarded as the overtone of longitudinal optical M phonons in bulk MoS2, is actually a combinational band involving a longitudinal acoustic mode (LA(M)) and an optical mode (). Our findings suggest a clear evolution of the coupling between electronic transition and phonon when MoS2 is scaled down from three- to two-dimensional geometry.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Baillargeat, Dominique
Li, Hong
Zhang, Qing
Yap, Ray Chin Chong
Tay, Beng Kang
Teo, Edwin Hang Tong
Olivier, Aurelien
format Article
author Baillargeat, Dominique
Li, Hong
Zhang, Qing
Yap, Ray Chin Chong
Tay, Beng Kang
Teo, Edwin Hang Tong
Olivier, Aurelien
author_sort Baillargeat, Dominique
title From bulk to monolayer MoS2 : evolution of Raman scattering
title_short From bulk to monolayer MoS2 : evolution of Raman scattering
title_full From bulk to monolayer MoS2 : evolution of Raman scattering
title_fullStr From bulk to monolayer MoS2 : evolution of Raman scattering
title_full_unstemmed From bulk to monolayer MoS2 : evolution of Raman scattering
title_sort from bulk to monolayer mos2 : evolution of raman scattering
publishDate 2013
url https://hdl.handle.net/10356/97030
http://hdl.handle.net/10220/10431
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