Synthesis of boron nitride nanowires
A chemical method has been developed for synthesizing boron nitride nanowires through the reaction of a mixture gas of nitrogen (N2) and ammonia (NH3) over nanoscale α-FeB particles at 1100 °C. Boron content in the product comes from the α-FeB catalyst itself. Transmission electron microscopic image...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2011
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/97184 http://hdl.handle.net/10220/6895 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-97184 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-971842023-07-14T15:46:47Z Synthesis of boron nitride nanowires Chen, F. Fu, J. J. Hu, Z. Liu, B. H. Huo, K. F. Chen, Yan Ding, Jun Dong, Zhili White, Timothy John School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials A chemical method has been developed for synthesizing boron nitride nanowires through the reaction of a mixture gas of nitrogen (N2) and ammonia (NH3) over nanoscale α-FeB particles at 1100 °C. Boron content in the product comes from the α-FeB catalyst itself. Transmission electron microscopic image indicates an abundant quantity of BN nanowires with diameter about 20 nm and length up to several tens of microns. The product has also been characterized by high-resolution electron microscopy and electron energy loss spectrometer. The perfectly straight lattice fringes with an interlayer spacing of about 0.333 nm corresponding to d0002 spacing of h-BN indicate that the BN nanowires are well crystallized. Also, a growth mechanism has been speculated. Published version 2011-07-13T07:39:08Z 2019-12-06T19:39:58Z 2011-07-13T07:39:08Z 2019-12-06T19:39:58Z 2002 2002 Journal Article Huo, K. F., Hu, Z., Chen, F., Fu, J. J., Chen, Y., Liu, B. H., et al. (2002). Synthesis of boron nitride nanowires. Applied Physics Letters, 80(19), 3611-3613. https://hdl.handle.net/10356/97184 http://hdl.handle.net/10220/6895 10.1063/1.1479213 en Applied physics letters © 2002 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.1479213]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials |
| spellingShingle |
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Chen, F. Fu, J. J. Hu, Z. Liu, B. H. Huo, K. F. Chen, Yan Ding, Jun Dong, Zhili White, Timothy John Synthesis of boron nitride nanowires |
| description |
A chemical method has been developed for synthesizing boron nitride nanowires through the reaction of a mixture gas of nitrogen (N2) and ammonia (NH3) over nanoscale α-FeB particles at 1100 °C. Boron content in the product comes from the α-FeB catalyst itself. Transmission electron microscopic image indicates an abundant quantity of BN nanowires with diameter about 20 nm and length up to several tens of microns. The product has also been characterized by high-resolution electron microscopy and electron energy loss spectrometer. The perfectly straight lattice fringes with an interlayer spacing of about 0.333 nm corresponding to d0002 spacing of h-BN indicate that the BN nanowires are well crystallized. Also, a growth mechanism has been speculated. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Chen, F. Fu, J. J. Hu, Z. Liu, B. H. Huo, K. F. Chen, Yan Ding, Jun Dong, Zhili White, Timothy John |
| format |
Article |
| author |
Chen, F. Fu, J. J. Hu, Z. Liu, B. H. Huo, K. F. Chen, Yan Ding, Jun Dong, Zhili White, Timothy John |
| author_sort |
Chen, F. |
| title |
Synthesis of boron nitride nanowires |
| title_short |
Synthesis of boron nitride nanowires |
| title_full |
Synthesis of boron nitride nanowires |
| title_fullStr |
Synthesis of boron nitride nanowires |
| title_full_unstemmed |
Synthesis of boron nitride nanowires |
| title_sort |
synthesis of boron nitride nanowires |
| publishDate |
2011 |
| url |
https://hdl.handle.net/10356/97184 http://hdl.handle.net/10220/6895 |
| _version_ |
1772827183815852032 |