Formation of Cu diffusion channels in Ta layer of a Cu/Ta/SiO2/Si structure

• Main Authors: Li, S., Dong, Zhili, Maung Latt, K., Park, H. S., White, Timothy John
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/97180; http://hdl.handle.net/10220/6894
• Institution: Nanyang Technological University

Three mechanisms for the formation of Cu diffusion channels in the Ta layer of a Cu/Ta/SiO2/Si structure are proposed. First, it is suggested that stacking faults formed during the recovery process induce localized regions of high internal energy in the Ta layer, from which Cu channels originate. Se...